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UnitedSiC UJ3N Normally-On JFET Transistors

Author : Unitedsic Published Time : 2018-10-29
United Silicon Carbide UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (RDS(ON)), as low as 25mΩ, and low gate charge (QG) allowing for low conduction and reduced switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0V is also ideal for current protection circuits without the need for active control. The UJ3N JFET Transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes", which give all the advantages of wide band-gap technology with very high operating voltages and easy gate drive.

Features

Ultra-low on resistance (RDS(ON)) and gate charge (QG)Voltage controlledMaximum operating temperature of 175°CExtremely fast switching not dependent on temperature

Applications

Over current protection circuitsDC-AC invertersSwitch mode power supplies

Product Catalogs

UnitedSiC Product Selector Guide: SiC FETs, SiC JFETs, and SiC Schottky Diodes

Application Notes

Cascode Configuration Eases Challenges of Applying SiC JFETsOverview of United Silicon Carbide Normally-On JFET