United Silicon Carbide UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (RDS(ON)), as low as 25mΩ, and low gate charge (QG) allowing for low conduction and reduced switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0V is also ideal for current protection circuits without the need for active control. The UJ3N JFET Transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes", which give all the advantages of wide band-gap technology with very high operating voltages and easy gate drive.
Features
Ultra-low on resistance (R
DS(ON)) and gate charge (Q
G)Voltage controlledMaximum operating temperature of 175°CExtremely fast switching not dependent on temperature
Applications
Over current protection circuitsDC-AC invertersSwitch mode power supplies
Product Catalogs
UnitedSiC Product Selector Guide: SiC FETs, SiC JFETs, and SiC Schottky DiodesApplication Notes
Cascode Configuration Eases Challenges of Applying SiC JFETsOverview of United Silicon Carbide Normally-On JFET